J. Phys. Soc. Jpn. 75S (2006) pp. 124-126 |Previous Article| |Next Article| |Table of Contents|
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Proc. of 5th Int. Symposium on ASR-WYP-2005 – Advances in the Physics and Chemistry of Actinide Compounds –
Single Crystal Growth of RNiX2 (R = U and Ce, X = Si and Ge) Ternary Compounds
1Department of Physics, Kyushu University, 6-10-1 Hakozaki, Higashi-ku, Fukuoka 812-8581
2Department of Evolution and Earth Environment, Kyushu University, 4-2-1 Ropponmatsu, Chuo-ku, Fukuoka 810-8560
3IMR Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577
We have attempted to grow single crystal of RNiX2 (R = U and Ce, X = Si and Ge) which crystallizes in orthorhombic CeNiSi2-type layered structure. Although RNiX2 compounds do not melt congruently, CeNiGe2 and UNiSi2 single crystals can be grown by the Czochralsky method from Ge- or Si-rich sample as the initial one. As for CeNiGe2, the nominal composition of each compounds are refined to be CeNixGe2 (x < 1) from the result of SEM analysis. Although it is well-known that CeNiGe2 orders antiferromagnetically at TN1 = 3.8 K and TN2 = 3.2 K, both TN1 and TN2 depend on the concentration of Ni. It may comes from the fact that the magnetic property relies on a structural homogeneity and a stoichiometry. UNiSi2, which orders ferromagnetically at TC = 95 K, displays the anisotropic behavior of the magnetization. The easy magnetization direction is in the ac plane. From the result of the magnetic susceptibility along the ac plane, the effective magnetic moment is obtained to be µeff ∼2.47 µB, which is larger than that of porycrystalline sample, µeff ∼1.9 µB.
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