J. Phys. Soc. Jpn. 75S (2006) pp. 124-126  |Previous Article| |Next Article|  |Table of Contents|
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Proc. of 5th Int. Symposium on ASR-WYP-2005 – Advances in the Physics and Chemistry of Actinide Compounds –

Single Crystal Growth of RNiX₂ (R = U and Ce, X = Si and Ge) Ternary Compounds

Masashi Ohashi¹, Gendo Oomi¹, Kiyotaka Ishida² and Isamu Satoh³

We have attempted to grow single crystal of RNiX₂ (R = U and Ce, X = Si and Ge) which crystallizes in orthorhombic CeNiSi₂-type layered structure. Although RNiX₂ compounds do not melt congruently, CeNiGe₂ and UNiSi₂ single crystals can be grown by the Czochralsky method from Ge- or Si-rich sample as the initial one. As for CeNiGe₂, the nominal composition of each compounds are refined to be CeNi_xGe₂ (x < 1) from the result of SEM analysis. Although it is well-known that CeNiGe₂ orders antiferromagnetically at T_N1 = 3.8 K and T_N2 = 3.2 K, both T_N1 and T_N2 depend on the concentration of Ni. It may comes from the fact that the magnetic property relies on a structural homogeneity and a stoichiometry. UNiSi₂, which orders ferromagnetically at T_C = 95 K, displays the anisotropic behavior of the magnetization. The easy magnetization direction is in the ac plane. From the result of the magnetic susceptibility along the ac plane, the effective magnetic moment is obtained to be µ_eff ∼2.47 µ_B, which is larger than that of porycrystalline sample, µ_eff ∼1.9 µ_B.

URL: http://jpsj.ipap.jp/link?JPSJS/75S/124/
DOI: 10.1143/JPSJS.75S.124

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